Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors. Proceedings of European Solid State Device Research Conference. pp. 795-798 .
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Published date: 1996
Venue - Dates:
Proceedings of European Solid State Device Research Conference, 1996-01-01
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250934
URI: http://eprints.soton.ac.uk/id/eprint/250934
PURE UUID: f567cfc5-28f7-44ec-adff-b6f670af0cd0
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Date deposited: 01 Oct 1999
Last modified: 08 Jan 2022 14:39
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Contributors
Author:
H Boussetta
Author:
H J Gregory
Author:
J M Bonar
Author:
P Ashburn
Author:
G J Parker
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