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Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors

Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors At Proceedings of European Solid State Device Research Conference. , pp. 795-798.

Record type: Conference or Workshop Item (Other)

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Published date: 1996
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1996-01-01
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 250934
URI: http://eprints.soton.ac.uk/id/eprint/250934
PURE UUID: f567cfc5-28f7-44ec-adff-b6f670af0cd0

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Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: H Boussetta
Author: H J Gregory
Author: J M Bonar
Author: P Ashburn
Author: G J Parker

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