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Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors

Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors
Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors
795-798
Boussetta, H
541c4991-d5b3-4613-b1f8-0418067007f3
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Boussetta, H
541c4991-d5b3-4613-b1f8-0418067007f3
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors. Proceedings of European Solid State Device Research Conference. pp. 795-798 .

Record type: Conference or Workshop Item (Other)

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Published date: 1996
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1996-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250934
URI: https://eprints.soton.ac.uk/id/eprint/250934
PURE UUID: f567cfc5-28f7-44ec-adff-b6f670af0cd0

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 16 Jul 2019 23:09

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