Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors


Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors At Proceedings of European Solid State Device Research Conference. , pp. 795-798.

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Item Type: Conference or Workshop Item (Other)
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1996-01-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250934
Date :
Date Event
1996Published
Date Deposited: 01 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250934

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