Electrical Characteristics of low thermal budget polysilicon emitters for Si/SiGe heterojunction bipolar transistors
Electrical Characteristics of low thermal budget polysilicon emitters for Si/SiGe heterojunction bipolar transistors
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kennedy, G P
7ee93f16-26f5-403e-9574-d22c48b69810
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
1995
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kennedy, G P
7ee93f16-26f5-403e-9574-d22c48b69810
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Gregory, H J, Ashburn, P, Kennedy, G P and Robbins, D J
(1995)
Electrical Characteristics of low thermal budget polysilicon emitters for Si/SiGe heterojunction bipolar transistors.
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250937
URI: http://eprints.soton.ac.uk/id/eprint/250937
PURE UUID: 6c57ab19-7cba-4c7a-954c-3b5703284f37
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Author:
H J Gregory
Author:
G P Kennedy
Author:
D J Robbins
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