Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal
Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1995
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P
(1995)
Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal.
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250938
URI: http://eprints.soton.ac.uk/id/eprint/250938
PURE UUID: 768094a1-7228-453a-ab0e-65ce7fe1491f
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
C D Marsh
Author:
N E Moiseiwitsch
Author:
G R Booker
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