Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal


Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P (1995) Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250938
Date :
Date Event
1995Published
Date Deposited: 04 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250938

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