Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non-negligible base broadening.
255-259
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
1995
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L
(1995)
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors.
Microelectronics Journal, 26 (2-3), .
(doi:10.1016/0026-2692(95)98927-J).
Abstract
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non-negligible base broadening.
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250940
URI: http://eprints.soton.ac.uk/id/eprint/250940
ISSN: 0026-2692
PURE UUID: 0f5672bf-a4e7-4340-99fa-6eed03ca477c
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Date deposited: 04 Oct 1999
Last modified: 16 Mar 2024 22:47
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Author:
M Mouis
Author:
H J Gregory
Author:
S Denorme
Author:
D Mathiot
Author:
D J Robbins
Author:
J L Glasper
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