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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8

Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors.

Record type: Other

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Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250940
URI: https://eprints.soton.ac.uk/id/eprint/250940
PURE UUID: 0f5672bf-a4e7-4340-99fa-6eed03ca477c

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Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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