Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
1995
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
(1995)
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors.
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250940
URI: http://eprints.soton.ac.uk/id/eprint/250940
PURE UUID: 0f5672bf-a4e7-4340-99fa-6eed03ca477c
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Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13
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Contributors
Author:
M Mouis
Author:
H J Gregory
Author:
S Denorme
Author:
D Mathiot
Author:
D J Robbins
Author:
J L Glasper
University divisions
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