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Citation
Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
More information
Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250940
URI: http://eprints.soton.ac.uk/id/eprint/250940
PURE UUID: 0f5672bf-a4e7-4340-99fa-6eed03ca477c
Catalogue record
Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13
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Contributors
Author:
M Mouis
Author:
H J Gregory
Author:
S Denorme
Author:
D Mathiot
Author:
P Ashburn
Author:
D J Robbins
Author:
J L Glasper
University divisions
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