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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

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Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250940
URI: http://eprints.soton.ac.uk/id/eprint/250940
PURE UUID: 0f5672bf-a4e7-4340-99fa-6eed03ca477c

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Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: M Mouis
Author: H J Gregory
Author: S Denorme
Author: D Mathiot
Author: P Ashburn
Author: D J Robbins
Author: J L Glasper

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