Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material.
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250942
URI: http://eprints.soton.ac.uk/id/eprint/250942
PURE UUID: d160e55b-f9aa-4c39-b51a-507f5ce1cf5d
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
Z A Shafi
Author:
P Ashburn
Author:
I R C Post
Author:
D J Robbins
Author:
W Y Leong
Author:
C J Gibbins
Author:
S Nigrin
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