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Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material

Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material
Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Leong, W Y
28945d70-2a62-4966-a1f5-9600d797d812
Gibbins, C J
7de23e3f-0295-42a4-bdcf-975c63db116c
Nigrin, S
d8129e48-e430-4bcc-9350-fae597cc96a7
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Leong, W Y
28945d70-2a62-4966-a1f5-9600d797d812
Gibbins, C J
7de23e3f-0295-42a4-bdcf-975c63db116c
Nigrin, S
d8129e48-e430-4bcc-9350-fae597cc96a7

Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material.

Record type: Other

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More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250942
URI: https://eprints.soton.ac.uk/id/eprint/250942
PURE UUID: d160e55b-f9aa-4c39-b51a-507f5ce1cf5d

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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