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Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material

Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material

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Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250942
URI: http://eprints.soton.ac.uk/id/eprint/250942
PURE UUID: d160e55b-f9aa-4c39-b51a-507f5ce1cf5d

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Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: Z A Shafi
Author: P Ashburn
Author: I R C Post
Author: D J Robbins
Author: W Y Leong
Author: C J Gibbins
Author: S Nigrin

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