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Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation

Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation
Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation
A study is made of fluorine implantation into n+ polycrystalline silicon (polysilicon), with the aim of producing completely epitaxially regrown polysilicon emitters at lower temperatures. Polysilicon-on-silicon sheet resistance measurements are made to obtain an indication of the amount of polysilicon regrowth, and cross-section transmission electron microscope examinations to directly observe the regrowth. Samples given a fluorine implant, followed by a 1000 °C/10 min preanneal, show 50% epitaxial regrowth of the polysilicon after an emitter drive-in of only 850 °C/ 30 min. In contrast, in the absence of fluorine, negligible regrowth occurs even after an emitter drive-in of 850 °C/480 min.
0003-6951
Moiseiwitsch, N.E.
3cca82f7-300c-4ef9-9298-f68d784d3735
Marsh, C.
a0ed2b40-a22c-428d-aedd-6936f2d43e93
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G.R.
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N.E.
3cca82f7-300c-4ef9-9298-f68d784d3735
Marsh, C.
a0ed2b40-a22c-428d-aedd-6936f2d43e93
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G.R.
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9

Moiseiwitsch, N.E., Marsh, C., Ashburn, P. and Booker, G.R. (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation. Applied Physics Letters, 66 (15). (doi:10.1063/1.113276).

Record type: Article

Abstract

A study is made of fluorine implantation into n+ polycrystalline silicon (polysilicon), with the aim of producing completely epitaxially regrown polysilicon emitters at lower temperatures. Polysilicon-on-silicon sheet resistance measurements are made to obtain an indication of the amount of polysilicon regrowth, and cross-section transmission electron microscope examinations to directly observe the regrowth. Samples given a fluorine implant, followed by a 1000 °C/10 min preanneal, show 50% epitaxial regrowth of the polysilicon after an emitter drive-in of only 850 °C/ 30 min. In contrast, in the absence of fluorine, negligible regrowth occurs even after an emitter drive-in of 850 °C/480 min.

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Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 250944
URI: https://eprints.soton.ac.uk/id/eprint/250944
ISSN: 0003-6951
PURE UUID: 6ed43de2-9e7f-4f1f-85ff-dc8028c39b2d

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Date deposited: 04 Oct 1999
Last modified: 18 Dec 2018 17:30

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Contributors

Author: N.E. Moiseiwitsch
Author: C. Marsh
Author: P. Ashburn
Author: G.R. Booker

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