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Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation

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Citation

Moiseiwitsch, N E, Marsh, C, Ashburn, P and Booker, G R (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation

More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250944
URI: http://eprints.soton.ac.uk/id/eprint/250944
PURE UUID: 6ed43de2-9e7f-4f1f-85ff-dc8028c39b2d

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: N E Moiseiwitsch
Author: C Marsh
Author: P Ashburn
Author: G R Booker

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