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LPCVD growth of SiGe for device applications

LPCVD growth of SiGe for device applications
LPCVD growth of SiGe for device applications
Bonar, J M
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Parker, G J
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Hamel, J S
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD growth of SiGe for device applications.

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More information

Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250945
URI: http://eprints.soton.ac.uk/id/eprint/250945
PURE UUID: d498643d-c2c4-498c-8f05-6251940978a9

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: J M Bonar
Author: G J Parker
Author: J S Hamel
Author: P Ashburn

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