Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology
Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology
Marty, A
ac28fb75-4c0e-41ee-9a71-96c7ca9b9d1d
Nouailhat, A
1f1cd513-03d7-477c-9a01-048153cb5209
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1994
Marty, A
ac28fb75-4c0e-41ee-9a71-96c7ca9b9d1d
Nouailhat, A
1f1cd513-03d7-477c-9a01-048153cb5209
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marty, A, Nouailhat, A and Ashburn, P
(1994)
Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250946
URI: http://eprints.soton.ac.uk/id/eprint/250946
PURE UUID: 77d35b01-6436-487a-a5a1-17d779b892c1
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
A Marty
Author:
A Nouailhat
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