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Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology

Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology
Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology
Marty, A
ac28fb75-4c0e-41ee-9a71-96c7ca9b9d1d
Nouailhat, A
1f1cd513-03d7-477c-9a01-048153cb5209
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marty, A
ac28fb75-4c0e-41ee-9a71-96c7ca9b9d1d
Nouailhat, A
1f1cd513-03d7-477c-9a01-048153cb5209
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Marty, A, Nouailhat, A and Ashburn, P (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology.

Record type: Other

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More information

Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250946
URI: http://eprints.soton.ac.uk/id/eprint/250946
PURE UUID: 77d35b01-6436-487a-a5a1-17d779b892c1

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: A Marty
Author: A Nouailhat
Author: P Ashburn

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