Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications.
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More information
Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250947
URI: http://eprints.soton.ac.uk/id/eprint/250947
PURE UUID: 24d26207-9174-4eba-8854-078dfb04fb1c
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
P Ashburn
Author:
A Nouailhat
Author:
M D R Hashim
Author:
G J Parker
Author:
M Mouis
Author:
D J Robbins
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