Temperature dependence of the current gain of Si/SiGe for device applications


Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250947
Date :
Date Event
1994Published
Date Deposited: 04 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250947

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