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Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6

Record type: Other

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Citation

Ashburn, P, Nouailhat, A and Chantre, A (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6

More information

Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250949
URI: http://eprints.soton.ac.uk/id/eprint/250949
PURE UUID: bb41fc8e-4142-45e0-9aba-add86867d194

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: P Ashburn
Author: A Nouailhat
Author: A Chantre

University divisions


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