Post, I R C, Ashburn, P and Nouailhat, A (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250952
URI: http://eprints.soton.ac.uk/id/eprint/250952
PURE UUID: bd3689e9-5d86-440c-bda1-deea38198379
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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