Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter
Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter
Chan, K K
e58138fa-9e5d-4cbb-9d3c-28e624ad30a4
Amaratunga, G A J
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Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wong, S P
d46afa9d-093c-4b81-92f3-8729c831c784
1993
Chan, K K
e58138fa-9e5d-4cbb-9d3c-28e624ad30a4
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wong, S P
d46afa9d-093c-4b81-92f3-8729c831c784
Chan, K K, Amaratunga, G A J, Shafi, Z A, Ashburn, P and Wong, S P
(1993)
Bipolar transistor action from an amorphous carbon/silicon heterojunction emitter.
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Published date: 1993
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250961
URI: http://eprints.soton.ac.uk/id/eprint/250961
PURE UUID: 9e4219a7-c0c8-4cb5-86f9-e2dec928aeaf
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Date deposited: 05 Oct 1999
Last modified: 04 Jan 2024 04:23
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Contributors
Author:
K K Chan
Author:
G A J Amaratunga
Author:
Z A Shafi
Author:
S P Wong
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