Modelling of anomalous boron diffusion in Si'SiGe HBTs
Modelling of anomalous boron diffusion in Si'SiGe HBTs
Gregory, H J
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Mouis, M
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Mathiot, D
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Robbins, D J
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Glasper, J
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Ashburn, P
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Nigrin, S
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1993
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J
8bdbc816-30cd-4fe1-b31e-3d4a5db26df7
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Nigrin, S
d8129e48-e430-4bcc-9350-fae597cc96a7
Gregory, H J, Mouis, M, Mathiot, D, Robbins, D J, Glasper, J, Ashburn, P and Nigrin, S
(1993)
Modelling of anomalous boron diffusion in Si'SiGe HBTs.
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Published date: 1993
Additional Information:
Organisation: ESSDERC
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250963
URI: http://eprints.soton.ac.uk/id/eprint/250963
PURE UUID: 34028a2d-fa93-44d1-a8ab-fd7d3e9f65f8
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Date deposited: 05 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
H J Gregory
Author:
M Mouis
Author:
D Mathiot
Author:
D J Robbins
Author:
J Glasper
Author:
S Nigrin
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