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New time-of-flight technique for measuring drift velocity in Semiconductors

New time-of-flight technique for measuring drift velocity in Semiconductors
New time-of-flight technique for measuring drift velocity in Semiconductors
A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.
0013-5194
195 – 196
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Robson, P N
9e62149c-0dba-4126-91f1-e5528c9d673c
Stubbs, M G
2a58c2a2-5d52-4db8-8d4f-b6a62b5ad502
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Robson, P N
9e62149c-0dba-4126-91f1-e5528c9d673c
Stubbs, M G
2a58c2a2-5d52-4db8-8d4f-b6a62b5ad502

Evans, A G R, Robson, P N and Stubbs, M G (1972) New time-of-flight technique for measuring drift velocity in Semiconductors. Electronics Letters, 8 (8), 195 – 196. (doi:10.1049/el:19720142).

Record type: Article

Abstract

A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.

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More information

Published date: 1972
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250984
URI: http://eprints.soton.ac.uk/id/eprint/250984
ISSN: 0013-5194
PURE UUID: fcfa1899-ffcd-4983-b5a8-2935087f6a1f

Catalogue record

Date deposited: 08 Oct 1999
Last modified: 19 Oct 2022 16:44

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Contributors

Author: A G R Evans
Author: P N Robson
Author: M G Stubbs

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