Threshold shift of NMOS transistors due to high energy source/drain implantation


Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation

Download

Full text not available from this repository.

Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250992
Date :
Date Event
1985Published
Date Deposited: 08 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250992

Actions (login required)

View Item View Item