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Polycrystalline Silicon Strain Sensors

Polycrystalline Silicon Strain Sensors
Polycrystalline Silicon Strain Sensors
A new theoretical model for piezoresistance in both n- and p-type polycrystalline silicon is described. This model considers piezoresistance in both the grains and in the Schottky-type barrier regions around the grain boundaries. Transport across the grain boundary is assumed to be dominated by thermionic emission. The effect of strain is to change the relative contribution to thermionic emission from each band minimum. Grain size, orientation trap density and doping dependence effects are included. By combining the bulk piezoresistive effects within the grain and the boundary effects, this model has given reasonable agreement with experimental results. This theory now enables optimum processing parameters for highest gauge factor production to be predicted.
0.1016/0250-6874(85)85004-6
1054-6693
French, P J
96a038f4-a5bb-459f-b608-a5b3cf32cd32
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
French, P J
96a038f4-a5bb-459f-b608-a5b3cf32cd32
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311

French, P J and Evans, A G R (1985) Polycrystalline Silicon Strain Sensors. Sensors and Actuators, 8 (3). (0.1016/0250-6874(85)85004-6).

Record type: Article

Abstract

A new theoretical model for piezoresistance in both n- and p-type polycrystalline silicon is described. This model considers piezoresistance in both the grains and in the Schottky-type barrier regions around the grain boundaries. Transport across the grain boundary is assumed to be dominated by thermionic emission. The effect of strain is to change the relative contribution to thermionic emission from each band minimum. Grain size, orientation trap density and doping dependence effects are included. By combining the bulk piezoresistive effects within the grain and the boundary effects, this model has given reasonable agreement with experimental results. This theory now enables optimum processing parameters for highest gauge factor production to be predicted.

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Published date: November 1985
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250994
URI: http://eprints.soton.ac.uk/id/eprint/250994
DOI: 0.1016/0250-6874(85)85004-6
ISSN: 1054-6693
PURE UUID: 540fc619-6236-4842-88ed-babdfbfd4fcd

Catalogue record

Date deposited: 08 Oct 1999
Last modified: 22 May 2020 16:32

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Contributors

Author: P J French
Author: A G R Evans

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