Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon.
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More information
Published date: 1986
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250997
URI: http://eprints.soton.ac.uk/id/eprint/250997
PURE UUID: 79da8b2f-dc2e-4306-903c-528d8b3cef94
Catalogue record
Date deposited: 08 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
A F W Willoughby
Author:
A G R Evans
Author:
P Champ
Author:
K J Yallop
Author:
D J Godfrey
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