Diffusion of Boron in heavily doped n-and p-type silicon


Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250997
Date :
Date Event
1986Published
Date Deposited: 08 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250997

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