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Diffusion of Boron in heavily doped n-and p-type silicon

Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon

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Published date: 1986
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 250997
PURE UUID: 79da8b2f-dc2e-4306-903c-528d8b3cef94

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Date deposited: 08 Oct 1999
Last modified: 18 Jul 2017 10:13

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Author: A F W Willoughby
Author: A G R Evans
Author: P Champ
Author: K J Yallop
Author: D J Godfrey

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