Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions
Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Knee, N D
d7a57b0f-e758-4307-b1d5-8f7a4f989c56
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
1987
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Knee, N D
d7a57b0f-e758-4307-b1d5-8f7a4f989c56
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J, Knee, N D, Hart, M J and Evans, A G R
(1987)
Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions.
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Published date: 1987
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251004
URI: http://eprints.soton.ac.uk/id/eprint/251004
PURE UUID: bd407a01-4b7a-4170-a4b6-134cf1c3215a
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Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
G A J Amaratunga
Author:
N D Knee
Author:
M J Hart
Author:
A G R Evans
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