Punch-through techniques for charge collection in an extrinsic silicon CCD
Punch-through techniques for charge collection in an extrinsic silicon CCD
Parker, Dr G J
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Brotherton, S D
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Gill, A
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Shannon, J M
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February 1982
Parker, Dr G J
c3f9f069-0b6a-424c-8192-968ab6c90edc
Brotherton, S D
076ee4ea-3ba0-4881-bb05-c961d89e7b7d
Gill, A
98b611df-897b-4416-932b-e14f97309a83
Shannon, J M
d9c2c6d3-b665-4acd-bf7f-9328e6766674
Parker, Dr G J, Brotherton, S D, Gill, A and Shannon, J M
(1982)
Punch-through techniques for charge collection in an extrinsic silicon CCD.
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Published date: February 1982
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251014
URI: http://eprints.soton.ac.uk/id/eprint/251014
PURE UUID: c224c1e4-c381-4a55-8b6c-306bb17803f0
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Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
Dr G J Parker
Author:
S D Brotherton
Author:
A Gill
Author:
J M Shannon
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