Photoionisation cross-section of electron irradiation induced levels in silicon
Photoionisation cross-section of electron irradiation induced levels in silicon
Parker, Dr G J
c3f9f069-0b6a-424c-8192-968ab6c90edc
Brotherton, S D
076ee4ea-3ba0-4881-bb05-c961d89e7b7d
Gill, A
98b611df-897b-4416-932b-e14f97309a83
September 1983
Parker, Dr G J
c3f9f069-0b6a-424c-8192-968ab6c90edc
Brotherton, S D
076ee4ea-3ba0-4881-bb05-c961d89e7b7d
Gill, A
98b611df-897b-4416-932b-e14f97309a83
Parker, Dr G J, Brotherton, S D and Gill, A
(1983)
Photoionisation cross-section of electron irradiation induced levels in silicon.
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Published date: September 1983
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251016
URI: http://eprints.soton.ac.uk/id/eprint/251016
PURE UUID: f08f6dac-32ab-4c82-be6f-56a6e385ee5e
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Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
Dr G J Parker
Author:
S D Brotherton
Author:
A Gill
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