Post, I R C, Ashburn, P, Williams, J D, Moiseiwitsch, N E and Jerome, R C (1993) Polysilicon emitter bipolar transistors fabricated by rapid thermal processing.
Record type:
Other
This record has no associated files available for download.
More information
Published date: 1993
Additional Information:
Organisation: IEEE
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251020
URI: http://eprints.soton.ac.uk/id/eprint/251020
PURE UUID: a425d320-a048-4b95-bfb8-bf6c61909ae0
Catalogue record
Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
Export record
Contributors
Author:
I R C Post
Author:
P Ashburn
Author:
J D Williams
Author:
N E Moiseiwitsch
Author:
R C Jerome
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.