High temperature millisecond annealing of arsenic implanted silicon
High temperature millisecond annealing of arsenic implanted silicon
Atrip, J L
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Evans, A G R
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Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
1990
Atrip, J L
a1fb9f18-3821-4547-92d8-b0082c0c4220
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
Atrip, J L, Evans, A G R, Logan, J R and Jeynes, C
(1990)
High temperature millisecond annealing of arsenic implanted silicon.
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Published date: 1990
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251028
URI: http://eprints.soton.ac.uk/id/eprint/251028
PURE UUID: 51b14f5f-65d3-443f-bdf3-5aa4273a97b7
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Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
J L Atrip
Author:
A G R Evans
Author:
J R Logan
Author:
C Jeynes
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