Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Selberherr, S, Stippel, H and Strasser, E (eds.) In Simulation of Semiconductor Devices and Processes. vol. 5, Springer. 141–144 . (doi:10.1007/978-3-7091-6657-4_34).

Abstract

Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non negligible base broadening.

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