The University of Southampton
University of Southampton Institutional Repository

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non negligible base broadening.
141–144
Springer
Mouis, M.
40dc2773-db96-4b92-89d8-d0bd8c6c80a4
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Selberherr, S
Stippel, H
Strasser, E
Mouis, M.
40dc2773-db96-4b92-89d8-d0bd8c6c80a4
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
5ea1216d-2b83-44b1-a185-194f97657e7b
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Selberherr, S
Stippel, H
Strasser, E

Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Selberherr, S, Stippel, H and Strasser, E (eds.) In Simulation of Semiconductor Devices and Processes. vol. 5, Springer. 141–144 . (doi:10.1007/978-3-7091-6657-4_34).

Record type: Conference or Workshop Item (Paper)

Abstract

Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non negligible base broadening.

This record has no associated files available for download.

More information

Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251032
URI: http://eprints.soton.ac.uk/id/eprint/251032
PURE UUID: e12ac540-5f05-4c5f-96d2-493d3a1f20e2

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 16 Mar 2024 22:47

Export record

Altmetrics

Contributors

Author: M. Mouis
Author: H J Gregory
Author: S Denorme
Author: D Mathiot
Author: P Ashburn
Author: D J Robbins
Author: J L Glasper
Editor: S Selberherr
Editor: H Stippel
Editor: E Strasser

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×