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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Springer Verlag
Mouis, M.
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Gregory, H J
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Denorme, S
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Mathiot, D
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Ashburn, P
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Robbins, D J
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Glasper, J L
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Selberherr, S
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Stippel, H
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Strasser, E
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Mouis, M.
40dc2773-db96-4b92-89d8-d0bd8c6c80a4
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Denorme, S
d087f959-38bd-492c-8e5b-61b59484c263
Mathiot, D
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
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Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Selberherr, S
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Stippel, H
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Strasser, E
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Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L , Selberherr, S, Stippel, H and Strasser, E (eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors.

Record type: Other

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Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251032
URI: https://eprints.soton.ac.uk/id/eprint/251032
PURE UUID: e12ac540-5f05-4c5f-96d2-493d3a1f20e2

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Date deposited: 11 Oct 1999
Last modified: 18 Jul 2017 10:13

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