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Millisecond annealing for complementary metal-oxide semiconductor source and drain implants

Millisecond annealing for complementary metal-oxide semiconductor source and drain implants
Millisecond annealing for complementary metal-oxide semiconductor source and drain implants
Carter, J C
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Evans, A G R
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Timans, P J
22cb7ca9-b0d6-4df7-8b30-4266fbbe1d5e
England, J M C
ded6772b-d1c2-49e5-8f46-4e01127e1a75
Carter, J C
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Timans, P J
22cb7ca9-b0d6-4df7-8b30-4266fbbe1d5e
England, J M C
ded6772b-d1c2-49e5-8f46-4e01127e1a75

Carter, J C, Evans, A G R, Timans, P J and England, J M C (1999) Millisecond annealing for complementary metal-oxide semiconductor source and drain implants.

Record type: Other

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More information

Published date: 11 October 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251033
URI: http://eprints.soton.ac.uk/id/eprint/251033
PURE UUID: acf32422-216e-44c9-aa0f-98580fd0a133

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 29 Jan 2020 15:05

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