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Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants

Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants
Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants
Elsevier
Robbins, D J
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Leong, W Y
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Glasper, J L
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Pidduck, A J
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Jackson, R
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Post, I R C
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Shafi, Z A
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Robbins, D J
79df1ac2-40e0-4826-a2a6-f19f5ea6da48
Leong, W Y
28945d70-2a62-4966-a1f5-9600d797d812
Glasper, J L
ab011763-6149-435b-adcd-1a0d0effcbd8
Pidduck, A J
8cd3c1c9-1709-4d82-a9cf-f157c52638e8
Jackson, R
6287549a-58f1-4ca1-a860-82b757935617
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants.

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More information

Published date: 1992
Additional Information: Organisation: ESSDERC
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251037
URI: https://eprints.soton.ac.uk/id/eprint/251037
PURE UUID: 0d1075ad-5ac8-4e43-86f5-0cc0bbe6b343

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: D J Robbins
Author: W Y Leong
Author: J L Glasper
Author: A J Pidduck
Author: R Jackson
Author: I R C Post
Author: Z A Shafi
Author: P Ashburn

University divisions

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