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Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants

Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants

Record type: Other

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Published date: 1992
Additional Information: Organisation: ESSDERC
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251037
URI: http://eprints.soton.ac.uk/id/eprint/251037
PURE UUID: 0d1075ad-5ac8-4e43-86f5-0cc0bbe6b343

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: D J Robbins
Author: W Y Leong
Author: J L Glasper
Author: A J Pidduck
Author: R Jackson
Author: I R C Post
Author: Z A Shafi
Author: P Ashburn

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