Thick selective epitaxial growth of silicon at 960oC using silane only


Afshar-Hanaii, N, Bonar, J M, Evans, A G R, Parker, E H C, Starbuck, C M K and Kemhadjian, H A (1992) Thick selective epitaxial growth of silicon at 960oC using silane only

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 251039
Date :
Date Event
1992Published
Date Deposited: 11 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251039

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