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Thick selective epitaxial growth of silicon at 960ºC using silane only

Thick selective epitaxial growth of silicon at 960ºC using silane only
Thick selective epitaxial growth of silicon at 960ºC using silane only
Selective epitaxial layers of silicon have been successfully grown in a chlorine-free system. An optimum set of growth conditions has been found under which selective layers of up to 1 μm can be achieved. Excellent thickness uniformity (less than 5% standard deviation) across the wafer and from run to run has been achieved in windows as small as 1 μm, without any loading effect. In features with sidewalls aligned along the 〈100〉 direction, faceting is less pronounced as compared to features aligned along the 〈110〉 direction. The technology is promising for the fabrication of future ULSI devices, utilizing selective epitaxial growth of silicon.
0167-9317
237-246
Afshar-Hanaii, N.
4d2530df-e7b7-4f3f-ac49-9afe1787e1b9
Bonar, J.M.
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Parker, E.H.C.
e64c94b4-1029-4f6d-9ff2-6d305907f79c
Starbuck, C.M.K.
a85acc65-f4ee-46aa-a608-817d9993f8fd
Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b
Afshar-Hanaii, N.
4d2530df-e7b7-4f3f-ac49-9afe1787e1b9
Bonar, J.M.
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Parker, E.H.C.
e64c94b4-1029-4f6d-9ff2-6d305907f79c
Starbuck, C.M.K.
a85acc65-f4ee-46aa-a608-817d9993f8fd
Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b

Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Parker, E.H.C., Starbuck, C.M.K. and Kemhadjian, H.A. (1992) Thick selective epitaxial growth of silicon at 960ºC using silane only. Microelectronic Engineering, 18 (3), 237-246. (doi:10.1016/S0167-9317(05)80004-8).

Record type: Article

Abstract

Selective epitaxial layers of silicon have been successfully grown in a chlorine-free system. An optimum set of growth conditions has been found under which selective layers of up to 1 μm can be achieved. Excellent thickness uniformity (less than 5% standard deviation) across the wafer and from run to run has been achieved in windows as small as 1 μm, without any loading effect. In features with sidewalls aligned along the 〈100〉 direction, faceting is less pronounced as compared to features aligned along the 〈110〉 direction. The technology is promising for the fabrication of future ULSI devices, utilizing selective epitaxial growth of silicon.

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More information

Published date: August 1992
Additional Information: Microelectronic Engineering Volume 18, Issue 3, August 1992, Pages 237-246
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251039
URI: https://eprints.soton.ac.uk/id/eprint/251039
ISSN: 0167-9317
PURE UUID: 8ce0e69b-b119-473e-aba7-dcea475c3380

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Date deposited: 11 Oct 1999
Last modified: 18 Dec 2018 17:30

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Contributors

Author: N. Afshar-Hanaii
Author: J.M. Bonar
Author: A.G.R. Evans
Author: E.H.C. Parker
Author: C.M.K. Starbuck
Author: H.A. Kemhadjian

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