Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions
Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions
Williams, J D
99868e32-58be-4644-b8e1-e6fc4fdceedb
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1992
Williams, J D
99868e32-58be-4644-b8e1-e6fc4fdceedb
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Williams, J D and Ashburn, P
(1992)
Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions.
This record has no associated files available for download.
More information
Published date: 1992
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251044
URI: http://eprints.soton.ac.uk/id/eprint/251044
PURE UUID: 0e162d60-b9b0-4d3c-acd8-ceb8ecf31a94
Catalogue record
Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
Export record
Contributors
Author:
J D Williams
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics