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Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions

Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions
Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions
Williams, J D
99868e32-58be-4644-b8e1-e6fc4fdceedb
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Williams, J D
99868e32-58be-4644-b8e1-e6fc4fdceedb
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Williams, J D and Ashburn, P (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions.

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More information

Published date: 1992
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251044
URI: http://eprints.soton.ac.uk/id/eprint/251044
PURE UUID: 0e162d60-b9b0-4d3c-acd8-ceb8ecf31a94

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: J D Williams
Author: P Ashburn

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