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Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon

Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon
Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311

Altrip, J L and Evans, A G R (1992) Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon.

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More information

Published date: 1992
Additional Information: Proceedings of 22 European Solid State Device Research Conference published in Microelectronic Engineering.
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251052
URI: http://eprints.soton.ac.uk/id/eprint/251052
PURE UUID: fc6f8491-baa9-4f3c-bdf9-c4c5325979f8

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: J L Altrip
Author: A G R Evans

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