Measurements of Concentration and Photoionisation cross section of Indium in Silicon
Measurements of Concentration and Photoionisation cross section of Indium in Silicon
Parker, Dr G J
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Brotherton, S D
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Gale, I
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Gill, A
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July 1983
Parker, Dr G J
c3f9f069-0b6a-424c-8192-968ab6c90edc
Brotherton, S D
076ee4ea-3ba0-4881-bb05-c961d89e7b7d
Gale, I
4afa464c-3f9a-4fd6-a165-b1fbf28e0739
Gill, A
98b611df-897b-4416-932b-e14f97309a83
Parker, Dr G J, Brotherton, S D, Gale, I and Gill, A
(1983)
Measurements of Concentration and Photoionisation cross section of Indium in Silicon.
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Published date: July 1983
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251053
URI: http://eprints.soton.ac.uk/id/eprint/251053
PURE UUID: 8ab45318-7d2c-4272-8c71-6ef40ccf71eb
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Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
Dr G J Parker
Author:
S D Brotherton
Author:
I Gale
Author:
A Gill
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