Fabrication and performance of delta-doped Si n-MESFET grown by MBE
Fabrication and performance of delta-doped Si n-MESFET grown by MBE
Chan, Q
9d74af6d-cea6-40f7-ad58-42fe5628d4bb
Willander, M
9b777789-80e0-49ef-bdfd-e6c80909d3c8
Carter, J
8ed46261-07b9-4e87-a4fa-9c6ef513b7e9
Thanki, H
d268f503-8297-4811-a564-effde454e313
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
1993
Chan, Q
9d74af6d-cea6-40f7-ad58-42fe5628d4bb
Willander, M
9b777789-80e0-49ef-bdfd-e6c80909d3c8
Carter, J
8ed46261-07b9-4e87-a4fa-9c6ef513b7e9
Thanki, H
d268f503-8297-4811-a564-effde454e313
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Chan, Q, Willander, M, Carter, J, Thanki, H and Evans, A G R
(1993)
Fabrication and performance of delta-doped Si n-MESFET grown by MBE.
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Published date: 1993
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251155
URI: http://eprints.soton.ac.uk/id/eprint/251155
PURE UUID: 7e8dc804-1144-417d-b146-e7dbdb88812d
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Date deposited: 12 Oct 1999
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
Q Chan
Author:
M Willander
Author:
J Carter
Author:
H Thanki
Author:
A G R Evans
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