Afshar-Hanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only.
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Published date: 1993
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251156
URI: http://eprints.soton.ac.uk/id/eprint/251156
PURE UUID: 113e3eab-5382-4d37-86ea-344f36031b74
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Date deposited: 03 Jul 2000
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
N Afshar-Hanaii
Author:
J Peerlings
Author:
A G R Evans
Author:
J C Carter
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