The University of Southampton
University of Southampton Institutional Repository

Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only

Afshar-Hanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only

Record type: Other

Full text not available from this repository.

More information

Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251156
URI: http://eprints.soton.ac.uk/id/eprint/251156
PURE UUID: 113e3eab-5382-4d37-86ea-344f36031b74

Catalogue record

Date deposited: 03 Jul 2000
Last modified: 18 Jul 2017 10:11

Export record

Contributors

Author: N Afshar-Hanaii
Author: J Peerlings
Author: A G R Evans
Author: J C Carter

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×