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Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane

Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane
Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane
0013-5194
1455-1456
Waite, A M
d021f13b-f8dd-4398-89d1-bb9cf308072c
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Afshar-Hanaii, N
4d2530df-e7b7-4f3f-ac49-9afe1787e1b9
Waite, A M
d021f13b-f8dd-4398-89d1-bb9cf308072c
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Afshar-Hanaii, N
4d2530df-e7b7-4f3f-ac49-9afe1787e1b9

Waite, A M, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane. Electronics Letters, 30 (17), 1455-1456. (doi:10.1049/el:19940932).

Record type: Article

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More information

Published date: August 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251158
URI: https://eprints.soton.ac.uk/id/eprint/251158
ISSN: 0013-5194
PURE UUID: febe3770-556c-4a43-a61f-ab5b422878fc

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Date deposited: 12 Oct 1999
Last modified: 05 Dec 2018 17:30

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