Waite, A M, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane. Electronics Letters, 30 (17), 1455-1456. (doi:10.1049/el:19940932).
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Published date: August 1994
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 251158
URI: http://eprints.soton.ac.uk/id/eprint/251158
ISSN: 0013-5194
PURE UUID: febe3770-556c-4a43-a61f-ab5b422878fc
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Date deposited: 12 Oct 1999
Last modified: 15 Mar 2024 23:14
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Author:
A M Waite
Author:
A G R Evans
Author:
N Afshar-Hanaii
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