Post, I R C and Ashburn, P (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors.
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Published date: 1992
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 251159
URI: http://eprints.soton.ac.uk/id/eprint/251159
PURE UUID: 48c9397a-c348-44b9-ae50-3a931d8bb9ab
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Date deposited: 12 Oct 1999
Last modified: 10 Dec 2021 20:20
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