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Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,

Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,
Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,
Sidek, R M
aa58196f-9739-4999-bc2e-e99dd4a63903
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Kubiak, R A
fed90702-6a15-4857-9fa3-094d4700dd16
Sidek, R M
aa58196f-9739-4999-bc2e-e99dd4a63903
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Kubiak, R A
fed90702-6a15-4857-9fa3-094d4700dd16

Sidek, R M, Evans, A G R and Kubiak, R A (1999) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,

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Published date: 13 October 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251164
URI: http://eprints.soton.ac.uk/id/eprint/251164
PURE UUID: 747c8cda-24ec-4038-948e-1f0ca2d6449d

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Date deposited: 13 Oct 1999
Last modified: 18 Jul 2017 10:12

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Contributors

Author: R M Sidek
Author: A G R Evans
Author: R A Kubiak

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