Lander, R J P, Emeleus, C J, McGregor, B M, Parker, E H C, Whall, T E, Evans, A G R and Kennedy, G P (1997) Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K.
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More information
Published date: 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251178
URI: http://eprints.soton.ac.uk/id/eprint/251178
PURE UUID: f1376923-cb91-4f8e-9165-93277d5ec588
Catalogue record
Date deposited: 14 Oct 1999
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
R J P Lander
Author:
C J Emeleus
Author:
B M McGregor
Author:
E H C Parker
Author:
T E Whall
Author:
A G R Evans
Author:
G P Kennedy
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