The University of Southampton
University of Southampton Institutional Repository

Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K.

Record type: Other

Full text not available from this repository.

Citation

Lander, R J P, Emeleus, C J, McGregor, B M, Parker, E H C, Whall, T E, Evans, A G R and Kennedy, G P (1997) Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K.

More information

Published date: 1997
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251178
URI: http://eprints.soton.ac.uk/id/eprint/251178
PURE UUID: f1376923-cb91-4f8e-9165-93277d5ec588

Catalogue record

Date deposited: 14 Oct 1999
Last modified: 18 Jul 2017 10:12

Export record

Contributors

Author: R J P Lander
Author: C J Emeleus
Author: B M McGregor
Author: E H C Parker
Author: T E Whall
Author: A G R Evans
Author: G P Kennedy

University divisions


Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×