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TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors

Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors

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Published date: 1991
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 251182
URI: http://eprints.soton.ac.uk/id/eprint/251182
PURE UUID: 1a6ea8c6-78d0-4a9b-a62d-92268679368e

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Date deposited: 15 Oct 1999
Last modified: 18 Jul 2017 10:11

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Contributors

Author: M Hockley
Author: C G Tuppen
Author: C J Gibbings
Author: Z A Shafi
Author: P Ashburn

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