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A novel optical phase modulator design suitable for phased arrays

A novel optical phase modulator design suitable for phased arrays
A novel optical phase modulator design suitable for phased arrays
A new design of optical phase modulator in SIMOX has been demonstrated, which allows duplication of active waveguides with a minimum requirement for external contacts and metallization. The device is based on a common cathode configuration and requires 56.5 mA at 1.65 V to produce a π-phase shift. To confirm the experimental results, the same device structure has been modeled, and provided good agreement, with Vπ calculated to 1.70 V and 52.6 mA.
0733-8724
2016-2019
Jackson, S.M.
fb479318-f392-4f45-a869-8e459cbbb964
Hewitt, P.D.
9f847cc4-ef1d-4fc5-9c6f-59faf9d87145
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Tang, C.K.
03f12511-b0b1-4de1-9f14-201675d7c7d9
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Clark, J.
b26e2037-13aa-4c80-9153-58789bcf5aa6
Aveyard, C.
4ad9824d-dbfd-4f91-8f35-e56a341b766b
Navamar, F.
6e73fd32-0153-4dfc-b531-90bd776b30cb
Jackson, S.M.
fb479318-f392-4f45-a869-8e459cbbb964
Hewitt, P.D.
9f847cc4-ef1d-4fc5-9c6f-59faf9d87145
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Tang, C.K.
03f12511-b0b1-4de1-9f14-201675d7c7d9
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Clark, J.
b26e2037-13aa-4c80-9153-58789bcf5aa6
Aveyard, C.
4ad9824d-dbfd-4f91-8f35-e56a341b766b
Navamar, F.
6e73fd32-0153-4dfc-b531-90bd776b30cb

Jackson, S.M., Hewitt, P.D., Reed, G.T., Tang, C.K., Evans, A.G.R., Clark, J., Aveyard, C. and Navamar, F. (1998) A novel optical phase modulator design suitable for phased arrays. IEEE Journal of Lightwave Technology, 16 (11), 2016-2019. (doi:10.1109/50.730364).

Record type: Article

Abstract

A new design of optical phase modulator in SIMOX has been demonstrated, which allows duplication of active waveguides with a minimum requirement for external contacts and metallization. The device is based on a common cathode configuration and requires 56.5 mA at 1.65 V to produce a π-phase shift. To confirm the experimental results, the same device structure has been modeled, and provided good agreement, with Vπ calculated to 1.70 V and 52.6 mA.

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More information

Published date: November 1998
Additional Information: J. Lightwave Technol. 16, (11) 2016- (1998)
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251187
URI: https://eprints.soton.ac.uk/id/eprint/251187
ISSN: 0733-8724
PURE UUID: 6a35a579-b237-4387-ad83-b1a2649ce118

Catalogue record

Date deposited: 15 Oct 1999
Last modified: 13 Mar 2019 18:04

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