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Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors

Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors
Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Martin, A S R
9f703677-b534-48bf-bd82-039f92671025
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Godfrey, D J
86f29c09-10d6-4436-afca-bb65f85bcf6c
Gibbings, C
a69b373d-97b6-40fa-9df8-e464721a30c5
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Tuppen, C
2fa42534-f9c6-471a-950b-7b8a9985ef39
Jones, M E
d602c51c-a71d-4e85-806c-0fb09bc16ce7
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Martin, A S R
9f703677-b534-48bf-bd82-039f92671025
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Godfrey, D J
86f29c09-10d6-4436-afca-bb65f85bcf6c
Gibbings, C
a69b373d-97b6-40fa-9df8-e464721a30c5
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Tuppen, C
2fa42534-f9c6-471a-950b-7b8a9985ef39
Jones, M E
d602c51c-a71d-4e85-806c-0fb09bc16ce7

Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors

Record type: Other

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More information

Published date: 1991
Additional Information: Organisation: ESSDERC
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251195
URI: http://eprints.soton.ac.uk/id/eprint/251195
PURE UUID: e59b1205-5600-44fe-a584-100cdd16e535

Catalogue record

Date deposited: 19 Oct 1999
Last modified: 18 Jul 2017 10:11

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Contributors

Author: Z A Shafi
Author: A S R Martin
Author: P Ashburn
Author: D J Godfrey
Author: C Gibbings
Author: I R C Post
Author: C Tuppen
Author: M E Jones

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