Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors.
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More information
Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251197
URI: http://eprints.soton.ac.uk/id/eprint/251197
PURE UUID: af6ef049-ddb2-4db3-96f1-53b835c79e70
Catalogue record
Date deposited: 19 Oct 1999
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
Z A Shafi
Author:
C J Gibbings
Author:
P Ashburn
Author:
I R C Post
Author:
C G Tuppen
Author:
D J Godfrey
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