The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors


Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 251197
Date :
Date Event
1991Published
Date Deposited: 19 Oct 1999
Last Modified: 17 Apr 2017 23:44
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251197

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