Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions.
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Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 251198
URI: http://eprints.soton.ac.uk/id/eprint/251198
PURE UUID: 0d56c0e4-9b1b-496e-b4e3-6f7d06fc1a9c
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Date deposited: 19 Oct 1999
Last modified: 10 Dec 2021 20:20
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